Document Type
Article
Publication Date
Spring 4-11-2025
Abstract
This study investigates the impact of various counter-electrode materials on the overall power conversion efficiency (PCE) of perovskite solar cells (PSCs) fabricated on silicon substrates. We examined four distinct configurations using fluorine-doped tin oxide (FTO) as bare cell, copper (Cu), aluminum (Al), and highly p-doped silicon wafers as counter electrodes. The results indicate that the PSCs with Cu achieved the highest short-circuit current density (JSC) of 17.11 mA/cm2, while the p-doped silicon and aluminum showed lower JSC values of 16.19 mA/cm2 and 16.51 mA/cm2, respectively. Open-circuit voltage (VOC) values remained competitive across all cells, with FTO achieving a VOC of 0.98 V. Additionally, the maximum power conversion efficiency (PCE) was highest for Cu at 11.98%, while p-doped silicon achieved a PCE of 11.05%. Notably, the hysteresis index was consistent across all configurations, averaging around 15% to 16%. This comprehensive analysis contributes valuable insights toward developing high-efficiency, CMOS-compatible perovskite solar cells for integration into self-powered lab-on-chip systems.
Recommended Citation
Abdellatif, Sameh O. and sawires, eman, "The Role of Counter Electrode in Perovskite Solar Cell on Silicon Substrate to Enhance Power Conversion Efficiency for CMOS-Compatible Applications" (2025). Electrical Engineering. 112.
https://buescholar.bue.edu.eg/elec_eng/112