Document Type
Article
Publication Date
Fall 9-11-2024
Abstract
This study introduces a pioneering transistor-based equivalent circuit model explicitly tailored for mesostructured-based solar cells, primarily focusing on dye-sensitized solar cells (DSSCs) and perovskite solar cells (PSCs). By incorporating the experimental data spanning various inorganic, organic, and hybrid solar cell technologies across different optical injection levels, the model aims to provide a comprehensive understanding of the electrical behavior of these advanced photovoltaic devices. In addition to the circuit schematic, a Verilog-A script was created to elucidate the behavior of the cells, facilitating the utilization of such a block by the research community in developing interfacing circuits and implementing dc–dc converters within the framework of CMOS technology. Root-mean-square error analysis assesses the model's accuracy in predicting the experimental data. At the same time, the investigation extends to include the dynamic response of the cells through current–time analysis, as well as power losses. Notably, the response curve of the perovskite cell exhibits rapid escalation to peak current levels and displays heightened sensitivity to changes in illumination levels compared with DSSCs, with a response time of 1 ms for PSCs as opposed to 5 ms for DSSCs.
Recommended Citation
Sawires, eman Farouk and Abdellatif, Sameh O., "Advanced Transistor-Based Dynamic Equivalent Circuit Modeling of Mesostructured-Based Solar Cells" (2024). Electrical Engineering. 116.
https://buescholar.bue.edu.eg/elec_eng/116